Perpustakaan Digital ITB

PRELIMINARY STUDY OF ELECTRICAL PROPERTIES OF CeO2-Nd2O3 THIN FILM

326 views

Save At List

Penulis	:	ANDI NUR IZZATUL MUKMINAH (NIM 10203051)
Kontributor / Dosen Pembimbing	:	Pembimbing : Dr. Eng. Khairurrijal
Jenis Koleksi	:	Tugas Akhir
Tahun Terbit	:
Penerbit	:
Fakultas	:
Subjek	:
Kata Kunci	:	Conduction process, Impedance spectra, MOS, Neodymium-doped ceria, Thin film, Unbalanced magnetron sputtering
Sumber	:
Staf Input/Edit	:	Rizki Aprianti Ena Sukmana
File	:	7 file
Tanggal Input	:	27 Sep 2017

2008 TA PP ANDI NUR IZZATUL MUKMINAH 1-COVER.pdf

PUBLIC Open In Flipbook Ena Sukmana

2008 TA PP ANDI NUR IZZATUL MUKMINAH 1-BAB1.pdf

PUBLIC Open In Flipbook Ena Sukmana

2008 TA PP ANDI NUR IZZATUL MUKMINAH 1-BAB2.pdf

PUBLIC Open In Flipbook Ena Sukmana

2008 TA PP ANDI NUR IZZATUL MUKMINAH 1-BAB3.pdf

PUBLIC Open In Flipbook Ena Sukmana

2008 TA PP ANDI NUR IZZATUL MUKMINAH 1-BAB4.pdf

PUBLIC Open In Flipbook Ena Sukmana

2008 TA PP ANDI NUR IZZATUL MUKMINAH 1-BAB5.pdf

PUBLIC Open In Flipbook Ena Sukmana

2008 TA PP ANDI NUR IZZATUL MUKMINAH 1-PUSTAKA.pdf

PUBLIC Open In Flipbook Ena Sukmana

The electrical properties of CeO2-Nd2O3 thin film that deposited by using unbalanced magnetron sputtering method have been studied. These properties characterized in metal-oxide-semiconductor (MOS) modeled which is formed by Si/CeO2-Nd2O3/Al. Scanning electron microscope (SEM) and energy dispersive x-ray spectroscope (EDX) is used to know more about the surface morphology of the film and its atom composition. The electrical properties measured by using current-voltage-meter (IV-meter) and impedance spectroscopy. The investigation included the relationship between defect and the conduction processes in the thin film. The equivalent circuit model and the parameters values of the circuit from the impedance spectra are also discussed.