Perpustakaan Digital ITB

Integration of one-dimensional (1D) semi-conductors with two-dimensional (2D) materials into hybridsystems is identified as promising applications for newoptoelectronic and photodetection devices. Herein, a self-integrated hybrid ultraviolet (UV) photodetector based onInGaN nanorod arrays (NRAs) sandwiched between trans-parent top and back graphene contacts forming a Schottkyjunction has been demonstrated for thefirst time. Thecontrolled van der Waals epitaxy of the vertically alignedInGaN NRA assembly on graphene-on-Si substrates isachieved by plasma-assisted molecular beam epitaxy. Moreover, the self-assembly formation mechanisms of InGaN NRAson graphene are clarified by theoretical calculations withfirst-principles calculations based on density functional theory. Thepeculiar 1D/2D heterostructure hybrid system-based integrated UV photodetector simultaneously exhibits ultrafast responsetime (?50?s) and superhigh photosensitivity (?105A/W). It is highly believed that the concept proposed in this work has agreat potential and can be widely applied for the next-generation integrated 1D/2D nano-based optoelectronic andphotodetection devices