Perpustakaan Digital ITB

In this article, we report on an optically coupled, electrically isolated switchbased on the III-nitride heterostructures on a silicon substrate. All the circuit elements,including the ultraviolet (UV) detector and a normally on transistor, were monolithicallyintegrated on a single AlxGa1?xN/GaN high electron mobility transistor (HEMT) stackgrown on a 200 mm Si (111) substrate, and the process was fully compatible withconventional III-N HEMT fabricationflow. On-wafer UV detector was realized using a gate-recessed architecture which exhibited excellent spectral responsivity and broadband nature,while the discrete HEMT was found to exhibit ON current of 500 mA/mm. The integratedsystem was found to switch from an OFF-state current of 5?A (UV-Off) to an ON-statecurrent of 50 mA (UV-ON) in?4 ms, and this delay may be further reduced withoptimization of such a monolithic device design and improvement of crystal quality ofnitrides on the large area Si platforms