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FEW LAYER GRAPHENE DEPOSITION ON γ-Al2O3/Si(100) USING DC UNBALANCED MAGNETRON SPUTTERING

Penulis : ADHA SUKMA AJI ( nim : 20211302) Pembimbing :Dr. Eng. Yudi Darma
Kontributor / Dosen Pembimbing :
  • Pembimbing : Dr. Eng. Yudi Darma
Jenis Koleksi : Tesis
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Kata Kunci : In this work, carbon deposition using DC unbalanced magnetron-sputtering technique on γ-Al2O3 layer at low temperature has been systematically studied. Al2O3 were growth on silicon substrate using thermal evaporation of Al wire and continuing with dry oxidation of Al at 550 ºC. Thermal evaporation for high purity Al layer was conducted by selecting the current source as high as 40 Ampere. Sputtering process were carried out using Fe-doped carbon pellet as a target by maintain the chamber pressure of 4.6x10-2 Torr at substrate temperature of 300 ºC for time deposition range of 1 to 4 hours. The quality of Al2O3 on Si(100) and the characteristic of carbon thin film on γ-Al2O3 were analized by mean XRD, SEM, EDAX, FTIR, and Raman spectra. XRD and SEM analysis showed that Al2O3 film is growth uniformly on Si substrate and form the γ phase of Al2O3. Raman and FTIR spectra confirmed the formation of graphene like carbon on Al2O3. The change of atomic structure due to thermal annealing were analized by XRD spectra. The quality and number of graphene layers were investigated by using Raman spectra peaks observation.
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Staf Input/Edit : Alice D   Ena Sukmana
File : 7 file
Tanggal Input : 27 Sep 2017

In this work, carbon deposition using DC unbalanced magnetron-sputtering technique on γ-Al2O3 layer at low temperature has been systematically studied. Al2O3 were growth on silicon substrate using thermal evaporation of Al wire and continuing with dry oxidation of Al at 550 ºC. Thermal evaporation for high purity Al layer was conducted by selecting the current source as high as 40 Ampere. Sputtering process were carried out using Fe-doped carbon pellet as a target by maintain the chamber pressure of 4.6x10-2 Torr at substrate temperature of 300 ºC for time deposition range of 1 to 4 hours. The quality of Al2O3 on Si(100) and the characteristic of carbon thin film on γ-Al2O3 were analized by mean XRD, SEM, EDAX, FTIR, and Raman spectra. XRD and SEM analysis showed that Al2O3 film is growth uniformly on Si substrate and form the γ phase of Al2O3. Raman and FTIR spectra confirmed the formation of graphene like carbon on Al2O3. The change of atomic structure due to thermal annealing were analized by XRD spectra. The quality and number of graphene layers were investigated by using Raman spectra peaks observation.

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