2018 ERJNL PP Rajashree Das 1.pdf?
Terbatas Irwan Sofiyan
» ITB
Terbatas Irwan Sofiyan
» ITB
This Letter presents an Si FinFET on heterodielectric BOX, where the
effect of trap charges can be avoided. The investigation is based on a
3D simulation study. The BOX height also plays a significant role in
the device characteristics. The effect of trap charges using homodielectric
and heterodielectric BOX is verified by plotting the electron
density across a 2D cross section in the middle of the channel. The
authors further investigated the effect of temperatures, ranging from
room temperature to higher temperatures. The FinFET, with heterodielectric
BOX, shows no trap effect even when the temperature is
varied. On the other hand, a visible temperature effect is observed in
case of homodielectric BOX. Moreover, in case of homodielectric
BOX, the ON–OFF performance metric, (Q) is affected in presence
of trap charges; whereas no change is observed when a heterodielectric
BOX is used. As such, it is found that the FinFET with heterodielectric
BOX is more reliable and useful for current semiconductor industries.