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Impact of Wet Treatments on the Electrical Performance of Ge0.9Sn0.1-Based p?MOS Capacitors

Penulis : Mohamed Aymen Mahjoub [-]
Kontributor / Dosen Pembimbing :
  • Thibault Haffner, Se?bastien Labau, Etienne Eustache, Joris Aubin, Jean-Michel Hartmann, Ge?rard Ghibaudo, Bernard Pelissier, Franck Bassani, and Bassem Salem
Jenis Koleksi : Jurnal elektronik
Penerbit : Lain-lain
Fakultas :
Subjek :
Kata Kunci : germanium?tin (GeSn), wet treatments, depth profile, MOS capacitor, C?V measurements, pAR-XPS
Sumber : American Chemical Society
Staf Input/Edit : Irwan Sofiyan  
File : 1 file
Tanggal Input : 26 Feb 2019

2019_EJRNL_PP_Mohamed_Aymen_Mahjoub_1.pdf
Terbatas Irwan Sofiyan
» ITB

We have investigated the impact of different wet treatments on the electrical performances of germanium? tin (GeSn)-based p-MOS capacitors with 10% Sn. Atomic force microscopy (AFM) showed the presence of Sn droplets for the degreased Ge0.9Sn0.1 surface, which were removed by HCl, HF, and HF:HCl treatments. On the other hand, (NH4)2S and NH4OH treatments were not fully able to remove these droplets. X-ray photoelectron spectroscopy (XPS) measurements confirmed AFM results and highlighted the efficiency of HF, HCl, and HF:HCl treatments in removing Ge and Sn native oxide, which was not the case with (NH4)2S and NH4OH. Nevertheless, XPS showed a reoxidation of ...

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