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Ground-State Spin Blockade in a Single-Molecule Junction

Oleh   J. de Bruijckere [-]
Kontributor / Dosen Pembimbing : P. Gehring,; M. Palacios-Corella,; M. Clemente-León,; E. Coronado,; J. Paaske,; P. Hedegård,; and H. S. J. van der Zant
Jenis Koleksi : Jurnal elektronik
Penerbit : FMIPA - Fisika
Fakultas : Fakultas Matematika dan Ilmu Pengetahuan Alam (FMIPA)
Subjek :
Kata Kunci : -
Sumber : PHYSICAL REVIEW LETTERS 122, 197701 (2019); © 2019 American Physical Society
Staf Input/Edit : Ratnasari  
File : 1 file
Tanggal Input : 2019-05-16 09:26:28

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It is known that the quantum mechanical ground state of a nanoscale junction has a significant impact on its electrical transport properties. This becomes particularly important in transistors consisting of a single molecule. Because of strong electron-electron interactions and the possibility of accessing ground states with high spins, these systems are eligible hosts of a current-blockade phenomenon called a ground-state spin blockade. This effect arises from the inability of a charge carrier to account for the spin difference required to enter the junction, as that process would violate the spin selection rules. Here, we present a direct experimental demonstration of a ground-state spin blockade in a high-spin single-molecule transistor. The measured transport characteristics of this device exhibit a complete suppression of resonant transport due to a ground-state spin difference of 3=2 between subsequent charge states. Strikingly, the blockade can be reversibly lifted by driving the system through a magnetic ground-state transition in one charge state, using the tunability offered by both magnetic and electric fields.