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Study on the performance of amorphous silicon based devices

Proceeding from JBPTITBPP / 2007-02-14 18:47:03
Oleh : Wilson W. Wenas, Semiconductor Research Lab./ Dept. of Physics - ITB (wilson@bandung.wasantara.net.id)
Dibuat : 2001-06-19, dengan file

Keyword : amorphous silicon, thin film light emitting diode, thin film transistor, solar cells

amorphous silicon, thin film light emitting diode, thin film transistor, solar cells


The performance of amorphous silicon (a-Si) based devices was comprehensively studied. The devices studied included thin film light emitting diode (TFLED), thin film transistor (TFT) and solar cells. A novel structure of TFLED with a double barrier was proposed and its operation was modeled and simulated. It was found that the brightness TFLED with double barrier structure was two order of magnitude higher than the conventional TFLED. A simulation of the amorphous silicon TFT was successfully carried out. The effect of the density of states function on the I-V characteristics of the device was also carefully investigated. It was found that the tail states of amorphous silicon strongly affected the saturation current of drain. This result indicates that the reduction of tail states is necessary to increase the on/off ratio of TFT. A-Si solar cell with a textured transparent conducting oxide was also modeled to show its role in improving the output current of the devices

Deskripsi Alternatif :

The performance of amorphous silicon (a-Si) based devices was comprehensively studied. The devices studied included thin film light emitting diode (TFLED), thin film transistor (TFT) and solar cells. A novel structure of TFLED with a double barrier was proposed and its operation was modeled and simulated. It was found that the brightness TFLED with double barrier structure was two order of magnitude higher than the conventional TFLED. A simulation of the amorphous silicon TFT was successfully carried out. The effect of the density of states function on the I-V characteristics of the device was also carefully investigated. It was found that the tail states of amorphous silicon strongly affected the saturation current of drain. This result indicates that the reduction of tail states is necessary to increase the on/off ratio of TFT. A-Si solar cell with a textured transparent conducting oxide was also modeled to show its role in improving the output current of the devices


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