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High efficiency a-Si.: H solar cell grown by using dual chamber plasma enhanced chemical vapor deposition (PECVD) method

Proceeding from JBPTITBPP / 2007-02-14 18:47:04
Oleh : T. Winata, Lab. Electronic Material Physics/ Dept. Physics - ITB (toto@fi.itb.ac.id)
Dibuat : 2001-06-20, dengan file

Keyword : d -doped, efficiency, PECVD, a-Si.: H, solar cell

Hydrogenated amorphous silicon (a-Si.: H) solar cell devices of p-i-n structures have been successfully grown using dual chamber PECVD method with conversion efficiency of 10.38%. Its high efficiency is mainly caused by the replacement of the uniformly doped p-layer with the d -doped layer. The important contribution obtained from the d -doped p-layer is due to high transmittance compared to that of the informly p-layer. The optical band-gap of the d -doped p-layer (2.1 eV) is wider than that of the uniformly doped p-layer (1.7 eV). The FTIR spectra of these two, different layers are observed and chemically similar. The figure confirms that even the d-doped p-layer grown in different manner where the dopant B atoms are grown separately, these two layer are chemically the same. The experimental difficulties during the d-doped p-layer growth were encountered by introducing a second chamber in the PECVD system. The devices obtained shows short-circuit current (Jsc) of 6 mA/cm2, open-circuit voltage (Voc) of 0.784 volts, fill factor (FF) of 0.64, and efficiency of 10.38%


Deskripsi Alternatif :

Hydrogenated amorphous silicon (a-Si.: H) solar cell devices of p-i-n structures have been successfully grown using dual chamber PECVD method with conversion efficiency of 10.38%. Its high efficiency is mainly caused by the replacement of the uniformly doped p-layer with the d -doped layer. The important contribution obtained from the d -doped p-layer is due to high transmittance compared to that of the informly p-layer. The optical band-gap of the d -doped p-layer (2.1 eV) is wider than that of the uniformly doped p-layer (1.7 eV). The FTIR spectra of these two, different layers are observed and chemically similar. The figure confirms that even the d-doped p-layer grown in different manner where the dopant B atoms are grown separately, these two layer are chemically the same. The experimental difficulties during the d-doped p-layer growth were encountered by introducing a second chamber in the PECVD system. The devices obtained shows short-circuit current (Jsc) of 6 mA/cm2, open-circuit voltage (Voc) of 0.784 volts, fill factor (FF) of 0.64, and efficiency of 10.38%



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