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Penumbuhan film tipis GaN di atas sapphire dengan MOCVD berbantuan plasma

Proceeding from JBPTITBPP / 2007-02-14 18:47:03
Oleh : Sugianto, Lab. Electronic Material Physics/ Dept. Physics - ITB (fismatel@melsa.net.id)
Dibuat : 2001-06-20, dengan file

Keyword : GaN; sapphire; plasma-assisted MOCVD; crystalline quality; band gap energy

This paper reports a comparative study of thin film GaN grown on c-plane (0001) and a-plane (1120) sapphire by plasma-assisted metalorganic chemical vapor deposition method. Dependence of growth rate and crystalline quality on growth conditions are systematically investigated. Films were characterized by x-ray diffraction and UV-vis spectrometry films grown on both substrates are polycrystalline, with dominant orientation (1010) for growth temperature of 640oC. For films grown at 600oC on (1120) sapphire, the dominant orientation is in (0001) direction with full width at half maximum of 0.25 degree and the band gap energy of 3.40 eV


Deskripsi Alternatif :

This paper reports a comparative study of thin film GaN grown on c-plane (0001) and a-plane (1120) sapphire by plasma-assisted metalorganic chemical vapor deposition method. Dependence of growth rate and crystalline quality on growth conditions are systematically investigated. Films were characterized by x-ray diffraction and UV-vis spectrometry films grown on both substrates are polycrystalline, with dominant orientation (1010) for growth temperature of 640oC. For films grown at 600oC on (1120) sapphire, the dominant orientation is in (0001) direction with full width at half maximum of 0.25 degree and the band gap energy of 3.40 eV



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  • Wayan; M. Barmawi, Editor: