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Growth of GaN on GaAs by microwave plasma assited chemical vapor deposition

Proceeding from JBPTITBPP / 2007-02-14 18:47:04
Oleh : Ridwan A. Sani, Lab. of Electronic Material Physics/ Dept. of Physics - ITB (fismatel@melsa.net.id)
Dibuat : 2001-06-21, dengan file

Keyword : GaN; GaAs substrate; Plasma CVD

Thin films of GaN on Si-GaAs substrate were successfully grown by Microwave Plasma assisted Chemical Vapor Deposition (MPACVD) at substrate temperatures in the range of 600oC to 650oC. This temperatures are substantially lower than the growth temperature of GaN using a conventional CVD, which is in excess of 1000oC. Trimethylgallium (TMGa) and nitrogen were used as precursors. A plasma applicator was used to create the nitrogen plasma, which was delivered from the cavity to the place near the substrate heater using a quartz tube. X-ray diffraction measurements revealed that the grown layer have a hexagonal structure. For deposition at 600oC and plasma over of 180 watt, the film was grown at (1011) and (1120) crystal plane. Meanwhile film grown at 650oC and plasma power of 180 watt shows (1010) and (1120) orientation and the growth rate increased for higher substrate temperature. Hall-van de Pauw technique was employed to measure the electrical properties of the films. As grown material, room temperature mobility of the film varies from 12.9 cm2/V.s to 73 cm2/V.s.
Photoluminescence (PL) characterization at 300K shows a blue band centered at 440 nm and small peak at 370 nm for film grown at 600oC

Deskripsi Alternatif :

Thin films of GaN on Si-GaAs substrate were successfully grown by Microwave Plasma assisted Chemical Vapor Deposition (MPACVD) at substrate temperatures in the range of 600oC to 650oC. This temperatures are substantially lower than the growth temperature of GaN using a conventional CVD, which is in excess of 1000oC. Trimethylgallium (TMGa) and nitrogen were used as precursors. A plasma applicator was used to create the nitrogen plasma, which was delivered from the cavity to the place near the substrate heater using a quartz tube. X-ray diffraction measurements revealed that the grown layer have a hexagonal structure. For deposition at 600oC and plasma over of 180 watt, the film was grown at (1011) and (1120) crystal plane. Meanwhile film grown at 650oC and plasma power of 180 watt shows (1010) and (1120) orientation and the growth rate increased for higher substrate temperature. Hall-van de Pauw technique was employed to measure the electrical properties of the films. As grown material, room temperature mobility of the film varies from 12.9 cm2/V.s to 73 cm2/V.s.
Photoluminescence (PL) characterization at 300K shows a blue band centered at 440 nm and small peak at 370 nm for film grown at 600oC

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