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Preliminary studies of application of p-type a-SiC: H thin films in p-i-n solar cell devices

Proceeding from JBPTITBPP / 2007-02-14 18:47:03
Oleh : Nur Rahmat, Lab. of Electronic Material Physics/ Physics Dept. - ITB (toto@fi.itb.ac.id)
Dibuat : 2001-06-19, dengan file

Keyword : a-SiC:H, optical bandgap, solar cell

p-type hydrogenated amorphous silicon carbide (a-SiC:H) thin films have been grown using a mixture of 10% silane (SiH4) gas diluted in hydrogen, 100% methane (CH4) gas, and 10% diborane (B2H6) gas diluted in hydrogen. The optical bandgap (Eopt) of a-SiC:H thin films varies from 1.7 eV to 2.55 eV as CH4 gas fraction varies from 0% to 10%. The p-type a-SiC:H thin films has optical bandgap varied from 2.45 eV to 2.15 eV as dopant, B2H6 gas fraction varies from 0% to 1.5%. This wider optical bandgap results in higher transparency and consequently more lights can pass through to the active, i-layer if used as p-layer in p-i-n solar cell devices.
Preliminary application of the film in p-i-n solar cell devices showed promoting further works since even the open circuit voltage obtained is reasonably high, i.e. 0.475 volts, its short circuit current is very low, i.e. 3.56 mA/cm2

Deskripsi Alternatif :

p-type hydrogenated amorphous silicon carbide (a-SiC:H) thin films have been grown using a mixture of 10% silane (SiH4) gas diluted in hydrogen, 100% methane (CH4) gas, and 10% diborane (B2H6) gas diluted in hydrogen. The optical bandgap (Eopt) of a-SiC:H thin films varies from 1.7 eV to 2.55 eV as CH4 gas fraction varies from 0% to 10%. The p-type a-SiC:H thin films has optical bandgap varied from 2.45 eV to 2.15 eV as dopant, B2H6 gas fraction varies from 0% to 1.5%. This wider optical bandgap results in higher transparency and consequently more lights can pass through to the active, i-layer if used as p-layer in p-i-n solar cell devices.
Preliminary application of the film in p-i-n solar cell devices showed promoting further works since even the open circuit voltage obtained is reasonably high, i.e. 0.475 volts, its short circuit current is very low, i.e. 3.56 mA/cm2

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  • Agus S., T. Winata, M. Barmawi, Editor: