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Studi penumbuhan lapisan tipis silicon amorf nitrida terhidrogenasi (a-Si1-xNx:H) sebagai ‘insulator gate’ pada thin film transisitor (TFT)

Proceeding from JBPTITBPP / 2007-02-14 18:47:03
Oleh : Fitri S.A, Lab. Electronic Material Physics/ Dept. Physics - ITB (fismatel@melsa.net.id)
Dibuat : 2001-06-20, dengan file

Keyword : a-Si1-xNx:H; insulator gate; konduktivitas; optical bandgap; PECVD; SiH4

(a-Si1-xNx:H) thin films has been deposited by using plasma enhanced chemical vapor deposition (PECVD) technique with 10% SiH4 gas in H2 and 100% NH3 gas as gas sources. The optical bandgap of (a-Si1-xNx:H) thin film varies from 2 eV to 3.67 eV for variation of NH3 fraction in SiH4 from 0% to 60%. At 40% NH3 gas fraction in SiH4, the dark conductivity of the film obtained was 1.87x10-12 S.cm-1 which is suitable for application as insulator gate in thin film transistor (TFT)

Deskripsi Alternatif :

(a-Si1-xNx:H) thin films has been deposited by using plasma enhanced chemical vapor deposition (PECVD) technique with 10% SiH4 gas in H2 and 100% NH3 gas as gas sources. The optical bandgap of (a-Si1-xNx:H) thin film varies from 2 eV to 3.67 eV for variation of NH3 fraction in SiH4 from 0% to 60%. At 40% NH3 gas fraction in SiH4, the dark conductivity of the film obtained was 1.87x10-12 S.cm-1 which is suitable for application as insulator gate in thin film transistor (TFT)


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