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Studi awal penumbuhan film tipis GaSb dengan MOCVD vertikal dari precursor TMGa dan TDMaSb

Proceeding from JBPTITBPP / 2007-02-14 18:47:03
Oleh : Euis Sustini, Lab. Electronic Material Physics/ Dept. Physics - ITB (fismatel@melsa.net.id)
Dibuat : 2001-06-20, dengan file

Keyword : thin film

Thin film GaSb have been grown using vertical MOCVD from precursor TMGa and TDMASb at various growth condition. The growth temperatures and V/III ratio were in the range of 475oC – 525oC and 0.7 – 1.2, respectively.
The growth layers were characterized using XRD and SEM, the best surface morphology so far was obtained at the growth temperature of 500oC and V/III ratio of 0.99


Deskripsi Alternatif :

Thin film GaSb have been grown using vertical MOCVD from precursor TMGa and TDMASb at various growth condition. The growth temperatures and V/III ratio were in the range of 475oC – 525oC and 0.7 – 1.2, respectively.
The growth layers were characterized using XRD and SEM, the best surface morphology so far was obtained at the growth temperature of 500oC and V/III ratio of 0.99



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