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Studi awal penumbuhan a-SiC:H dengan metoda plasma-CVD (PECVD) untuk aplikasi divais sensor warna tunggal

Proceeding from JBPTITBPP / 2007-02-14 18:47:03
Oleh : Agus Supriyanto, Lab. Electronic Material Physics/ Dept. Physics - ITB (fismatel@indo.net.id)
Dibuat : 2001-06-20, dengan file

Keyword : a-SiC:H, CH4, PECVD, UV-Vis, SiH4

Hydrogenated amorphous-silicon carbide (a-SiC:H) thin films of I-, p-, and n-type have been deposited by using dual chamber PECVD. The optical bandgap of a-SiC:H film of I-type obtained varied from 1.7 eV to 2.4 eV for methan gas fraction in silane (SiH4) from 0% to 12,5%. The p-type and n-type of a-SiC:H films with optical bandgap of 2.0 eV was obtained using 2% diborane (B2H6) dopant gas and 1.87% phosphine (PH3) dopant gas respectively. It shown that absorbed wavelength of a-SiC:H thin films of optical bandgap of 2.0 eV and 2.2 eV is less than 500 nm, the absorption of p-type and n-type of a-SiC:H films are shown. This films are suitable for application as single color sensor device in blue range


Deskripsi Alternatif :

Hydrogenated amorphous-silicon carbide (a-SiC:H) thin films of I-, p-, and n-type have been deposited by using dual chamber PECVD. The optical bandgap of a-SiC:H film of I-type obtained varied from 1.7 eV to 2.4 eV for methan gas fraction in silane (SiH4) from 0% to 12,5%. The p-type and n-type of a-SiC:H films with optical bandgap of 2.0 eV was obtained using 2% diborane (B2H6) dopant gas and 1.87% phosphine (PH3) dopant gas respectively. It shown that absorbed wavelength of a-SiC:H thin films of optical bandgap of 2.0 eV and 2.2 eV is less than 500 nm, the absorption of p-type and n-type of a-SiC:H films are shown. This films are suitable for application as single color sensor device in blue range



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  • Fitri S. Arsyad; Sukirno; T. Winata; M. Barmawi, Editor: